Dr. Rajendra Singh

Dr. Rajendra Singh
Associate Professor
Indian Institute of Technology Delhi
Hauz Khas,New Delhi-110016
Tel:+91-11-2659 6495 (O)
rsingh[at]physics.iitd.ac.in

Present member of the group

Trilok Singh (Ph.D. student). Ashish Kumar (Ph.D. studert). Uday Dadwa1 (project Assistant). Rajesh Bag (Part time Ph.D. student),Chandra Shekhar (M.Tech. project.), Durga Rao Gajula (M.Tech. project.), Vikas Pareek (M.Sc. project), Aalap Verma & Vivek Pawar (B .Tech. project student). Shashi Kant & Laboni Mandal (B .Tech. project student), Mendeep Thakur (Technical Assistant).

About Dr. Rajendra Singh

Rajendra Singh received his Ph.D. in Physics from Inter-University Accelerator Centre (IUAC). Jawaharlal Nehru University, New Delhi, India in 2001. His Ph.D. work was concerned with the study of the effect of Swift heavy ion irradiation on the electrical properties of Si and GaAs. After that he worked as a post doctoral fellow at the Walter Schottky Instistute, Technical University Munich, Germany from October, 2001 to December 2003. There he worked on the design. fabrication and characterization of InP-Based heterojunction bipolar transistors. From Januaty, 2004 to November, 2006 he wotked at the Max Planck Institute of Microstructute Physics, Halle, Germany. He was involved in the area of semiconductor wafer bonding.stained silicon-on-insu1ator (sSOI) fabrication and hydrogen-implantation-induced layer .plitting studies in SiGe, GaN, InP, ZnO etc. He extensively used Class 1 cleanrooom facilities for his research regarding semiconductor and material. and device processing. He has published about 40 publications in the international journal. and edited volumes.

Selected recent publications:

  • R. Singh, R Schob, S.H. Christiansen and U. Ooesele, Formation ofnanovoidslmicrocracks in high don hydrogen implanted AlN, Phys. Slat. Sol. (a) 2008 V01.205, pp.2683
  • R. Singh, R. Scholz, SR. Christiansen arid U. Ooesele, Formation ofnanovoidslmicrocracks in high dose hydrogen implanted AlN, Semicond. Sci. Technol. 2008 Vol.23, pp.045007
  • C. Himcinschi, R. Singh, I. Radu, AP. Milenin, W. Erfutth, M. Reiche, U. Goesele, S. Christiansen, F. Muster,M. Petzold, Sttain relaxation in nanpattemed strained silicon round pillars,.Appl. Phy:s. Lett. 2007 Vo1.90, pp,021902
  • SR. Christiansen, R. Singh, U. Ooesele, We.fet Duect Bonding:From advanced substtate engineetingto future applications in nanolmicroelectronics, Proc. IllEg, 2006 Vol. 94, pp. 2060