Prof. Pankaj Srivastava

Prof. Pankaj Srivastava
Indian Institute of Technology Delhi
Hauz Khas,New Delhi-110016
Tel:+91-11-2659 6558 (O)

Member of groups

Nano-Science & Technology (NANOSTECH Laboratory)

About Prof. Pankaj Srivastava

Pankaj Srivastava is currently a Professor in the Department of Physics. He obtained his M.Sc. and Ph.D. degrees in Physics from University of Rajasthan, Jaipur, India. He has worked as a post-doctoral fellow at CRISMAT, Caen, France (1995) and Free University, Berlin, Germany (1996-98). He is the recipient of Alexander von Humboldt Fellowship (1996-1997) and has worked as a guest scientist at Free University, Berlin (1998) and University of Duisburg-Essen (2007) in Germany. He has extensively worked at various synchrotron facilities in Europe and has also worked as a Visiting Scientist at RRCAT, Indore (India). His interest lies in surface-interface characterization and electronic structure of technologically relevant systems viz. semiconductor-insulator surfaces and interfaces, multilayer coatings for high-density optical storage discs and magnetically switchable molecules. He has more than 100 research publications in refereed journals.

Selected recent publications:

  • Tailoring the Nature of Magnetic Coupling of Fe-Porphyrin Molecules to Ferromagnetic Substrates; Physical Review Letters 102 (2009) 047202.
  • Phase stabilization by rapid thermal annealing in amorphous hydrogenated silicon nitride film; J. Phys.: Condens. Matter 21 (2009)095010.
  • Room temperature transparent ferromagnetism in 200 keV Ni2+ ion implanted pulsed laser deposition grown ZnO/sapphire film; J. Appl. Phys. 107 (2010)023901.
  • Growth kinetics and compositional analysis of silicon rich a-SiNx:Hfilm: A soft X-ray reflectivity study;Appl. Phys. Lett. 97 (2010)151906.
  • Probing origin of room temperature ferromagnetism in Ni ion implanted ZnO films with X-ray absorption spectroscopy;J. Appl. Phys. 111 (2012)013715.
  • Ion beam induced dissolution and precipitation of in situ formed Si-nanostructures in a-SiNx:H matrix; Nuclear Instruments and Methods in Physics Research B 276 (2012) 51.